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KSE13005 PDF预览

KSE13005

更新时间: 2024-11-30 22:32:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
5页 50K
描述
High Voltage Switch Mode Application

KSE13005 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.42Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):8
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

KSE13005 数据手册

 浏览型号KSE13005的Datasheet PDF文件第2页浏览型号KSE13005的Datasheet PDF文件第3页浏览型号KSE13005的Datasheet PDF文件第4页浏览型号KSE13005的Datasheet PDF文件第5页 
KSE13004/13005  
High Voltage Switch Mode Application  
High Speed Switching  
Suitable for Switching Regulator and Motor Control  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: KSE13004  
: KSE13005  
600  
700  
V
V
CBO  
: KSE13004  
: KSE13005  
300  
400  
V
V
CEO  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
9
V
A
EBO  
I
4
C
I
8
A
CP  
I
2
75  
A
B
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
(sus) Collector-Emitter Sustaining Voltage  
CEO  
: KSE13004  
: KSE13005  
I
= 10mA, I = 0  
300  
400  
V
V
C
B
I
Emitter Cut-off Current  
*DC Current Gain  
V
= 9V, I = 0  
1
mA  
EBO  
EB  
C
h
V
V
= 5V, I = 1A  
10  
8
60  
40  
FE  
CE  
CE  
C
= 5V, I = 2A  
C
V
V
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter Saturation Voltage  
I
I
I
= 1A, I = 0.2A  
0.5  
0.6  
1
V
V
V
CE  
C
C
C
B
= 2A, I = 0.5A  
B
= 4A, I = 1A  
B
(sat)  
I
I
= 1A, I = 0.2A  
1.2  
1.6  
V
V
BE  
C
C
B
= 2A, I = 0.5A  
B
C
Output Capacitance  
Current Gain Bandwidth Product  
Turn On Time  
V
V
V
= 10V, f = 0.1MHz  
65  
pF  
MHz  
µs  
ob  
CB  
CE  
CC  
f
t
t
t
= 10V, I = 0.5A  
4
T
C
= 125V, I = 2A  
0.8  
4
ON  
STG  
F
C
I
= - I = 0.4A  
Storage Time  
B1  
B2  
µs  
R = 62.5Ω  
L
Fall Time  
0.9  
µs  
* Pulse test: PW300µs, Duty cycle2% Pulse  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, January 2001  

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