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KSE13007FH1SM PDF预览

KSE13007FH1SM

更新时间: 2024-11-14 20:43:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
6页 84K
描述
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

KSE13007FH1SM 技术参数

生命周期:Obsolete零件包装代码:TO-220F
包装说明:TO-220F, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.69
外壳连接:ISOLATED最大集电极电流 (IC):8 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):5JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

KSE13007FH1SM 数据手册

 浏览型号KSE13007FH1SM的Datasheet PDF文件第2页浏览型号KSE13007FH1SM的Datasheet PDF文件第3页浏览型号KSE13007FH1SM的Datasheet PDF文件第4页浏览型号KSE13007FH1SM的Datasheet PDF文件第5页浏览型号KSE13007FH1SM的Datasheet PDF文件第6页 
KSE13007F  
High Voltage Switch Mode Application  
High Speed Switching  
Suitable for Switching Regulator and Motor Control  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector- Base Voltage  
Collector- Emitter Voltage  
Emitter- Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
700  
V
V
CBO  
CEO  
EBO  
400  
9
V
I
I
I
8
A
C
16  
A
CP  
B
4
40  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
I
= 10mA, I = 0  
400  
CEO  
EBO  
C
B
I
V
= 9V, I = 0  
1
mA  
EB  
C
h
DC Current Gain  
V
V
= 5V, I = 2A  
8
5
60  
30  
FE  
CE  
CE  
C
= 5V, I = 5A  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
I
= 2A, I = 0.4A  
1
2
3
V
V
V
CE  
C
C
C
B
= 5A, I = 1A  
B
= 8A, I = 2A  
B
(sat)  
I
I
= 2A, I = 0.4A  
1.2  
1.6  
V
V
BE  
C
C
B
= 5A, I = 1A  
B
C
Output Capacitance  
Current Gain Bandwidth Product  
Turn On Time  
V
V
V
= 10V , f = 0.1MHz  
110  
pF  
MHz  
µs  
ob  
CB  
CE  
CC  
f
t
t
t
= 10V, I = 0.5A  
4
T
C
=125V, I = 5A  
1.6  
3
ON  
C
I
= - I = 1A  
Storage Time  
B1  
B2  
µs  
STG  
F
R = 50Ω  
L
Fall Time  
0.7  
µs  
* Pulse Test: PW300µs, Duty Cycle2%  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, June 2002  

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