生命周期: | Obsolete | 零件包装代码: | TO-220F |
包装说明: | TO-220F, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 5 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSE13007FH3SM | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSE13007FSM | FAIRCHILD |
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Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSE13007FSMTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSE13007H1SM | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE13007H1SMTU | FAIRCHILD |
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Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE13007H2SM | FAIRCHILD |
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Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE13007H2SMTU | FAIRCHILD |
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Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE13007H2SMTU | ROCHESTER |
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8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN | |
KSE13007SM | FAIRCHILD |
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Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE13008 | FAIRCHILD |
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High Voltage Switch Mode Application |