是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SIP | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.92 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 12 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 12.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSE171STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
KSE172 | FAIRCHILD |
获取价格 |
Low Power Audio Amplifier Low Current, High Speed Switching Applications | |
KSE172STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
KSE180 | FAIRCHILD |
获取价格 |
Low Power Audio Amplifier Low Current High Speed Switching Applications | |
KSE180 | FOSHAN |
获取价格 |
TO-126F | |
KSE180S | ROCHESTER |
获取价格 |
3A, 40V, NPN, Si, POWER TRANSISTOR, TO-126 | |
KSE181 | FAIRCHILD |
获取价格 |
Low Power Audio Amplifier Low Current High Speed Switching Applications | |
KSE181STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
KSE182 | FAIRCHILD |
获取价格 |
Low Power Audio Amplifier Low Current High Speed Switching Applications | |
KSE182STU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ |