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KSE13003H2ASTU PDF预览

KSE13003H2ASTU

更新时间： 2024-12-01 11:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 583K
描述
NPN芯片晶体管

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中文翻译

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KSE13003H2ASTU 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：TO-126, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：1.02
最大集电极电流 (IC)：1.5 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：14
JEDEC-95代码：TO-126JESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：20 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：4 MHz
Base Number Matches：1

KSE13003H2ASTU 数据手册

 浏览型号KSE13003H2ASTU的Datasheet PDF文件第2页浏览型号KSE13003H2ASTU的Datasheet PDF文件第3页浏览型号KSE13003H2ASTU的Datasheet PDF文件第4页浏览型号KSE13003H2ASTU的Datasheet PDF文件第5页浏览型号KSE13003H2ASTU的Datasheet PDF文件第6页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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中文翻译

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KSE13003H2ASTU 替代型号

型号 品牌 替代类型 描述 数据表
FJE3303H2TU ONSEMI

完全替代

 NPN硅晶体管的平面硅晶体管
FJE3303H1TU ONSEMI

类似代替

 NPN硅晶体管的平面硅晶体管

与KSE13003H2ASTU相关器件

型号 品牌 获取价格 描述 数据表
KSE13003H3ASTU FAIRCHILD

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 		NPN Silicon Transistor
KSE13003T FAIRCHILD

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 		High Voltage Switch Mode Applications
KSE13003TATU FAIRCHILD

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 		Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
KSE13003TH1ATU FAIRCHILD

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 		Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
KSE13003TH1ATU ONSEMI

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 		NPN芯片晶体管
KSE13003TTU FAIRCHILD

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 		Transistor,
KSE13004 FAIRCHILD

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 		High Voltage Switch Mode Application
KSE13004J69Z FAIRCHILD

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 		Power Bipolar Transistor, 4A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSE13004TU FAIRCHILD

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 		Power Bipolar Transistor, 4A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSE13005 FAIRCHILD

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 		High Voltage Switch Mode Application

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