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KSE13001H1MBU PDF预览

KSE13001H1MBU

更新时间: 2024-11-30 19:37:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
5页 61K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

KSE13001H1MBU 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.83
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

KSE13001H1MBU 数据手册

 浏览型号KSE13001H1MBU的Datasheet PDF文件第2页浏览型号KSE13001H1MBU的Datasheet PDF文件第3页浏览型号KSE13001H1MBU的Datasheet PDF文件第4页浏览型号KSE13001H1MBU的Datasheet PDF文件第5页 
KSE13001  
Color TV Chroma Output  
Collector-Base Voltage : V  
Current Gain Bandwidth Product : f =50MHz (TYP.)  
=400V  
CBO  
T
TO-92  
1. Base 2. Collector 3. Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
400  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
400  
V
CEO  
EBO  
7
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
600  
C
T
T
150  
J
-55 ~ +150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
400  
400  
7
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =5mA, I =0  
C B  
I =100µA, I =0  
V
E
C
I
V
=200V, I =0  
0.1  
80  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=10V, I =20mA  
40  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =1mA  
0.5  
V
CE  
C
B
f
V
=30V, I =10mA  
50  
4
MHz  
pF  
T
CE  
CB  
C
C
V
=10V, I =0, f=1MHz  
ob  
E
h
Classification  
FE  
Classification  
R
O
h
40 ~ 65  
55 ~ 80  
FE  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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