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KSE13003ASTU PDF预览

KSE13003ASTU

更新时间: 2024-11-30 13:01:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
4页 50K
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KSE13003ASTU 数据手册

 浏览型号KSE13003ASTU的Datasheet PDF文件第2页浏览型号KSE13003ASTU的Datasheet PDF文件第3页浏览型号KSE13003ASTU的Datasheet PDF文件第4页 
KSE13003  
High Voltage Switch Mode Applications  
High Speed Switching  
Suitable for Switching Regulator and Motor Control  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
700  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
V
V
CBO  
CEO  
EBO  
400  
9
V
I
I
I
1.5  
A
C
3
A
CP  
B
0.75  
20  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
I
= 5mA, I = 0  
400  
CEO  
EBO  
C
B
I
V
= 9V, I = 0  
10  
40  
µA  
EB  
C
h
*DC Current Gain  
V
V
= 2V, I = 0.5A  
8
5
FE  
CE  
CE  
C
= 2V, I =1A  
C
V
V
(sat)  
*Collector Emitter Saturation Voltage  
*Base Emitter Saturation Voltage  
I
I
I
= 0.5A, I = 0.1A  
0.5  
1
3
V
V
V
CE  
C
C
C
B
= 1A, I = 0.25A  
B
= 1.5A, I = 0.5A  
B
(sat)  
I
I
= 0.5A, I = 0.1A  
1
1.2  
V
V
BE  
C
C
B
= 1A, I = 0.25A  
B
C
Output Capacitance  
Current Gain Bandwidth Product  
Turn On Time  
V
V
V
= 10V , f = 0.1MHz  
21  
pF  
MHz  
µs  
ob  
CB  
CE  
CC  
f
t
t
t
= 10V, I = 0.1A  
4
T
C
=125V, I = 1A  
1.1  
4.0  
0.7  
ON  
C
I
= 0.2A, I = - 0.2A  
Storage Time  
B1  
B2  
µs  
STG  
F
R = 125Ω  
L
Fall Time  
µs  
* Pulse Test: Pulse Width=5ms, Duty Cycle10%  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, December 2002  

KSE13003ASTU 替代型号

型号 品牌 替代类型 描述 数据表
KSE13003AS FAIRCHILD

完全替代

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
FJE3303H2TU FAIRCHILD

类似代替

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
KSE13003H2ASTU FAIRCHILD

类似代替

NPN Silicon Transistor

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