Datasheet > KSC5030F_05

KSC5030F_05

更新时间： 2024-11-25 04:21:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管高压
页数	文件大小	规格书
6页	143K
描述
High Voltage Fast Switching Transistor

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中文翻译

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数据手册

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KSC5030F_05 数据手册

KSC5030F

High Voltage Fast Switching Transistor

Features

•

Fast Speed Switching

Wide Safe Operating Area

TO-3PF

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings

Symbol

V_CBO

Parameter

Value

1100

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

800

Collector Current (DC)

* Collector Current (Pulse)

Collector Dissipation (T_C= 25°C)

Junction Temperature

I_CP

P_C

°C

T_J

150

T_STG

Storage Temperature

-55 ~ 150

* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

KSC5030F

KSC5030FRTU

TO3PF

KSC5030F Rev. A

www.fairchildsemi.com

12 3 4 5 6

中文翻译

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与KSC5030F_05相关器件

型号	品牌	获取价格	描述	数据表
KSC5030FO	FAIRCHILD	获取价格	暂无描述
KSC5030FOTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5030F-R	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5030FRTU	FAIRCHILD	获取价格	High Voltage Fast Switching Transistor
KSC5030FTBTU	FAIRCHILD	获取价格	暂无描述
KSC5030N	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5030-N	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5030O	FAIRCHILD	获取价格	暂无描述
KSC5030-O	SAMSUNG	获取价格	Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5030OTU	FAIRCHILD	获取价格	暂无描述