KSC5030
High Voltage and High Reliabilty
•
•
High Speed Switching
Wide SOA
TO-3P
1.Base 2.Collector 3.Emitter
1
NPN Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
1100
V
V
CBO
CEO
EBO
800
V
7
V
I
I
I
6
20
A
C
A
CP
B
3
A
P
T
T
Collector Dissipation (T =25°C)
100
W
°C
°C
C
C
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
I
I
= 1mA, I = 0
1100
800
7
V
V
V
V
CBO
CEO
EBO
C
C
E
BV
BV
= 5mA, I = 0
B
I = 1mA, I = 0
E
C
V
(sus)
I
= 3A, I = -I = 0.6A
800
CEX
C
B1
B2
L = 1mH, Clamped
I
I
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
V
V
= 800V, I = 0
10
10
40
µA
µA
CBO
EBO
CB
EB
E
= 5V, I = 0
C
h
h
V
V
= 5V, I = 0.4A
10
8
FE1
FE2
CE
CE
C
= 5V, I = 2A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
I
I
= 3A, I = 0.6A
2
V
V
CE
C
C
B
= 3A, I = 0.6A
1.5
BE
B
C
V
= 10V, I = 0, f = 1MHz
120
15
pF
MHz
µs
ob
CB
E
f
t
t
t
Current Gain Bandwidth Product
Turn ON Time
V
V
I
= 10V, I = 0.4A
T
CE
CC
C
= 400V
0.5
3
ON
= 51 = -2.5I = 4A
Storage Time
C
B1 B2
µs
STG
F
R = 100Ω
L
Fall Time
0.3
µs
h
Classificntion
FE
Classification
N
R
O
h
10 ~ 20
15 ~ 30
20 ~ 40
FE1
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001