生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 70 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC2859TR | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
KSC2859Y | FAIRCHILD |
获取价格 |
Low Frequency Power Amplifier | |
KSC2859-Y | SAMSUNG |
获取价格 |
暂无描述 | |
KSC2859YMTF | FAIRCHILD |
获取价格 |
Low Frequency Power Amplifier | |
KSC2859YS62Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
KSC2874 | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
KSC2881 | FAIRCHILD |
获取价格 |
Power Amplifier | |
KSC2881 | KEXIN |
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NPN Epitaxial Silicon Transistor | |
KSC2881 | TYSEMI |
获取价格 |
Collector-Emitter Voltage : VCEO=120V | |
KSC2881 | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89 |