是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-126 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.43 |
Is Samacsys: | N | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 10 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KSB772YSTSSTU | FAIRCHILD |
完全替代 |
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, | |
KSB772YSTSTU | FAIRCHILD |
类似代替 |
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSB772YSTU_NL | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, L | |
KSB794 | FAIRCHILD |
获取价格 |
Audio Frequency Power Amplifier | |
KSB794O | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 | |
KSB794R | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 | |
KSB794Y | FAIRCHILD |
获取价格 |
暂无描述 | |
KSB795 | FAIRCHILD |
获取价格 |
Audio Frequency Power Amplifier | |
KSB795O | FAIRCHILD |
获取价格 |
暂无描述 | |
KSB795-O | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 | |
KSB795R | FAIRCHILD |
获取价格 |
暂无描述 | |
KSB795-R | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126 |