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KSB772YSTU PDF预览

KSB772YSTU

更新时间: 2024-10-29 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管功率放大器局域网
页数 文件大小 规格书
5页 78K
描述
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126

KSB772YSTU 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.43
Is Samacsys:N最大集电极电流 (IC):3 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):160JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):10 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

KSB772YSTU 数据手册

 浏览型号KSB772YSTU的Datasheet PDF文件第2页浏览型号KSB772YSTU的Datasheet PDF文件第3页浏览型号KSB772YSTU的Datasheet PDF文件第4页浏览型号KSB772YSTU的Datasheet PDF文件第5页 
KSB772  
Audio Frequency Power Amplifier  
Low Speed Switching  
Complement to KSD882  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 40  
- 30  
- 5  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
V
V
I
I
I
- 3  
A
C
- 7  
A
CP  
B
- 0.6  
10  
A
P
Collector Dissipation (T =25°C)  
W
C
C
Collector Dissipation (T =25°C)  
1
W
a
R
R
Junction to Ambient  
Junction to Case  
132  
°C/W  
°C/W  
°C  
°C  
θja  
θjc  
13.5  
150  
T
Junction Temperature  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
- 1  
Units  
I
V
V
= - 30V, I = 0  
µA  
µA  
CBO  
EBO  
CB  
E
I
= - 3V, I = 0  
- 1  
EB  
C
h
h
V
V
= - 2V, I = - 20mA  
30  
60  
220  
160  
FE1  
FE2  
CE  
CE  
C
= - 2V, I = - 1A  
400  
- 0.5  
- 2.0  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
I
= - 2A, I = - 0.2A  
- 0.3  
- 1.0  
80  
V
V
CE  
C
C
B
= - 2A, I = - 0.2A  
BE  
B
f
V
= - 5V, I = - 0.1A  
MHz  
pF  
T
CE  
E
C
V
= - 10V, I = 0  
55  
ob  
CB  
E
f = 1MHz  
* Pulse Test: PW350µs, Duty Cycle2%  
h
Classificntion  
FE  
Classification  
R
O
Y
G
h
60 ~ 120  
100 ~ 200  
160 ~ 320  
200 ~ 400  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. B, October 2002  

KSB772YSTU 替代型号

型号 品牌 替代类型 描述 数据表
KSB772YSTSSTU FAIRCHILD

完全替代

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126,
KSB772YSTSTU FAIRCHILD

类似代替

Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126,

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