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KSB810YBU PDF预览

KSB810YBU

更新时间: 2024-10-29 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 音频放大器
页数 文件大小 规格书
4页 37K
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KSB810YBU 数据手册

 浏览型号KSB810YBU的Datasheet PDF文件第2页浏览型号KSB810YBU的Datasheet PDF文件第3页浏览型号KSB810YBU的Datasheet PDF文件第4页 
KSB810  
Audio Frequency Amplifier  
Complement to KSD1020  
TO-92S  
1.Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
CBO  
-25  
V
CEO  
EBO  
-5.0  
V
I
I
Collector Current (DC)  
* Collector Current (Pulse)  
-700  
mA  
A
C
-1.0  
CP  
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
350  
mW  
°C  
°C  
C
T
T
150  
J
-55 ~ 150  
STG  
* PW10ms, Duty cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-100  
-100  
400  
Units  
I
I
V
V
= -30V, I =0  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
= -5V, I =0  
C
h
h
V
V
= -1V, I = -100mA  
70  
35  
200  
100  
FE1  
FE2  
CE  
CE  
C
= -1V, I = -700mA  
C
V
V
V
(on)  
(sat)  
(sat)  
* Base-Emitter on Voltage  
V
= -6V, I = -10mA  
-600  
-640  
-0.25  
-0.95  
17  
-700  
-0.4  
-1.2  
40  
mV  
V
BE  
CE  
BE  
CE  
C
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Output Capacitance  
I = -700mA, I = -70mA  
C B  
I = -700mA, I = -70mA  
V
C
B
C
V
= -6V, I =0, f=1MHz  
pF  
MHz  
ob  
CB  
CE  
E
f
Current Gain Bandwidth Product  
V
= -6V, I =-10mA  
50  
160  
T
C
* Pulse Test: PW350µs, Duty cycle2%  
h
Classification  
FE  
Classification  
O
Y
G
h
70 ~ 140  
120 ~ 240  
200 ~ 400  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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