Datasheet > KSB798_05

KSB798_05

更新时间： 2024-10-29 05:41:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	430K
描述
PNP Epitaxial Silicon Transistor

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KSB798_05 数据手册

July 2005

KSB798

PNP Epitaxial Silicon Transistor

Audio Frequency Power Amplifier

•

Collector Current : I_C= -1A

Collector Power Dissipation : P_C= 2W

Marking

7 9

P Y

W W

SOT-89

Weekly code

Year code

h_FEgrage

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Ratings

-30

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

V_CEO

V_EBO

I_C

-25

-5

-1.0

I_CP

Collector Current (Pulse) *

Collector Power Dissipation

Junction Temperature

-1.5

P_C

2.0

°C

T_J

150

T_STG

Storage Temperature

-55 ~ 150

* PW ≤ 10ms, Duty cycle ≤ 50%

Electrical Characteristics T_a= 25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I_C= -100µA, I_E= 0

-30

-25

-5

I_C= -1mA, I_B= 0

I_E= -100µA, I_C= 0

V_CB= -30V, I_E= 0

V_EB= -5V, I_C= 0

V_CE= -1V, I_C= -0.1A

-0.1

400

µA

I_EBO

Emitter Cut-off Current

h_FE1

h_FE2

DC Current Gain

_CE= -1V, I_C= -1.0A

V_CE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

I_C= -1.0A, I_B= -0.1A

V_CE= -6V, I_C= -10mA

-0.4

-1.2

-0.7

_BE(sat)

_BE(on)

-0.6

f_T

Current Gain Bandwidth Product

Output Capacitance

110

MHz

C_ob

V_CB= -6V, I_E= 0, f = 1MHz

KSB798 Rev. B1

www.fairchildsemi.com

12 3 4 5

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KSB798-O	SAMSUNG	获取价格	暂无描述
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KSB810-O	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92S,