Datasheet > KRF7379

KRF7379

更新时间： 2024-11-20 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	66K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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KRF7379 数据手册

SMD Type

ICIC

HEXFET Power MOSFET

KRF7379

Features

Generation V Technology

Ultra Low On-Resistance

Complimentary Half Bridge

Surface Mount

Fully Avalanche Rated

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

N-Channel

P-Channel

-30

Unit

5.8

4.6

-4.3

Continuous Drain Current, V^GS@ 10V @ Ta = 25

Continuous Drain Current, V^GS@ 10V @ Ta = 70

Pulsed Drain Current *1

-3.4

I^DM

-34

2.5

0.02

Power Dissipation

@T^a= 25

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt *2

VGS

d^v/dt

5.0

-5.0

V/ns

-55 to + 150

Junction and Storage Temperature Range

Maximum Junction-to-Ambient *3

T^J, TSTG

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 N-Channel I^SD

P-Channel ISD

2.4A, di/dt

-1.8A, di/dt

73A/ s, VDD

90A/ s, VDD

V(BR)DSS, TJ

150

*3 Surface mounted on FR-4 board, t

10sec.

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