Datasheet > KRF7401

KRF7401

更新时间： 2024-11-18 12:32:19

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	132K
描述
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet

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中文翻译

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数据手册

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KRF7401 数据手册

SMD Type

ICIC

Product specification

KRF7401

Features

Generation V Technology

Ultra Low On-Resistance

N-Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

10 Sec. Pulsed Drain Current, V^GS@ 4.5V,Ta = 25

Continuous Drain Current, V^GS@ 4.5V,Ta = 25

Continuous Drain Current, V^GS@ 4.5V,T^C= 70

Pulsed Drain Current*1

Symbol

Rating

Unit

I^D

8.7

I^D

I^DM

P^D

Power Dissipation

2.5

Linear Derating Factor

0.02

Gate-to-Source Voltage

V^GS

dv/dt

Peak Diode Recovery dv/dt*2

-55 to + 150

V/ns

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient

T^J,T^STG

*1 Repetitive rating; pulse width limited by max. junction temperature.

*2 ISD 4.1A, dⁱ/d^t100A/ s, V^DDV^(BR)DSS,T^J150

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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