Datasheet > KRF7501

KRF7501

更新时间： 2024-11-20 12:04:15

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	383K
描述
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET

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中文翻译

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数据手册

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KRF7501 数据手册

SS MM DD TTyy pp ee

TrMaMnOOsSiSsFtFI

IEoCCICTs

IErC

Product specification

KRF7501

Features

Generation V Technology

Ulrtra Low On-Resistance

Dual N-Channel MOSFET

Very Small SOIC Package

Low Profile ( 1.1mm)

Available in Tape & Reel

Fast Switching

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

I^D

Rating

Unit

2.4

Continuous Drain Current, V^GS@ 10V,Ta = 25

Continuous Drain Current, V^GS@ 10V,T^A= 70

Pulsed Drain Current*1

I^D

1.9

I^DM

P^D

1.25

Power Dissipation Ta = 25 *1

Power Dissipation Ta = 70 *1

Linear Derating Factor

P^D

0.8

0.01

V^GSM

V^GS

Gate-to-Source Voltage Single Pulse tp 10

Gate-to-Source Voltage

Peak Diode Recovery dv/dt*1

d^v/d^t

V/ns

Junction and Storage Temperature Range

Junction-to-Ambient *2

T^J, T^STG

-55 to + 150

100

* I^SD

1.7A, dⁱ/d^t

66A/ s, V^DD

V^(BR)DSS,T^J

10sec.

150

*2 Surface mounted on FR-4 board, t

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4008-318-123

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