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KM718V887

更新时间: 2024-11-13 22:25:11
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
16页 472K
描述
256Kx18 Synchronous SRAM

KM718V887 数据手册

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KM718V887  
256Kx18 Synchronous SRAM  
Document Title  
256Kx18-Bit Synchronous Burst SRAM  
Revision History  
Remark  
Rev. No.  
History  
Draft Date  
Preliminary  
Preliminary  
0.0  
0.1  
Initial draft  
May. 15. 1997  
Modify power down cycle timing & Interleaved read timing,  
Insert Note 4 at AC timing characteristics.  
Change ISB1 value from 10mA to 30mA.  
February. 11. 1998  
Change ISB2 value from 10mA to 20mA.  
Preliminary  
Preliminary  
0.2  
0.3  
Change Undershoot spec  
April. 14. 1998  
May 13. 1998  
from -3.0V(pulse width£20ns) to -2.0V(pulse width£tCYC/2)  
Add Overshoot spec 4.6V((pulse width£tCYC/2)  
Change VIH max from 5.5V to VDD+0.5V  
Change ISB2 value from 20mA to 30mA.  
Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V.  
Final  
Final  
1.0  
2.0  
Final spec Release  
May 15. 1998  
Dec. 02. 1998  
Add VDDQ Supply voltage( 2.5V )  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
December 1998  
Rev. 2.0  

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