Datasheet > KM718V947-9

KM718V947-9

更新时间： 2024-11-15 05:29:31

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
17页	385K
描述
ZBT SRAM, 512KX18, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KM718V947-9 数据手册

KM736V847

KM718V947

256Kx36 & 512Kx18 Flow-Through NtRAM^TM

Document Title

256Kx36 & 512Kx18-Bit Flow Through NtRAM^TM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

1. Initial document.

April. 09. 1998

June. 02. 1998

Preliminary

Modify from ADV to ADV at timing.

Add the Trade Mark( NtRAM^TM

)

0.2

Sep. 09. 1998

Preliminary

1. Changed tCD from 8.0ns to 8.5ns at -8

2. Changed tCYC from 13.0ns to 12.0ns at -10

3. Changed DC condition at Icc and parameters

Icc ; from 240mA to 260mA at -10,

ISB1 ; from 10mA to 30mA,

ISB2 ; from 10mA to 30mA.

0.3

Oct. 15. 1998

Preliminary

1. ADD 119BGA(7x17 Ball Grid Array Package) .

2. ADD x32 organization

0.4

0.5

1.0

Dec. 10. 1998

Dec. 23. 1998

Jan. 29. 1999

Preliminary

Final

ADD VDDQ Supply voltage( 2.5V )

Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

1. Final Spec Release.

2. Remove x32 organization.

2.0

3.0

4.0

Feb. 25. 1999

May. 13. 1999

Nov. 19. 1999

Final

1. Remove VDDQ Supply voltage( 2.5V I/O )

1. Add VDDQ Supply voltage( 2.5V I/O )

1. Add tCYC 117MHz.

2. Remove 119BGA package.

3. Change tCYC from 12ns to 10ns at -9.

4. Changed DC condition at Icc and parameters

Icc ; from 300mA to 280mA at -8,

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

November 1999

Rev 4.0

12 3 4 5 6 7...17

中文翻译

下载PDF

与KM718V947-9相关器件

型号	品牌	获取价格	描述	数据表
KM718V947H-8	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 8.5ns, CMOS, PBGA119, BGA-119
KM718V947H-9	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 9ns, CMOS, PBGA119, BGA-119
KM718V947T-10000	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
KM718V947T-7	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
KM718V947T-70000	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
KM718V947T-80000	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
KM718V947T-90000	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
KM718V949-10	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM718V949H-75	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 4.2ns, CMOS, PBGA119, BGA-119
KM718V949T-67	SAMSUNG	获取价格	ZBT SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100