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KM718V949T-67 PDF预览

KM718V949T-67

更新时间: 2024-11-14 15:45:43
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
17页 390K
描述
ZBT SRAM, 512KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

KM718V949T-67 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92Is Samacsys:N
最长访问时间:3.8 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):149 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:9437184 bit
内存集成电路类型:ZBT SRAM内存宽度:18
功能数量:1端子数量:100
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL电源:2.5/3.3,3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.03 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.42 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
宽度:14 mmBase Number Matches:1

KM718V949T-67 数据手册

 浏览型号KM718V949T-67的Datasheet PDF文件第2页浏览型号KM718V949T-67的Datasheet PDF文件第3页浏览型号KM718V949T-67的Datasheet PDF文件第4页浏览型号KM718V949T-67的Datasheet PDF文件第5页浏览型号KM718V949T-67的Datasheet PDF文件第6页浏览型号KM718V949T-67的Datasheet PDF文件第7页 
KM736V849  
KM718V949  
256Kx36 & 512Kx18 Pipelined NtRAMTM  
Document Title  
256Kx36-Bit Pipelined NtRAMTM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
1. Initial document.  
June. 09. 1998  
Aug. 19. 1998  
Preliminary  
Preliminary  
1. Changed DC parameters  
ICC; from 450mA to 420mA at 150MHZ.  
ISB1; from 10mA to 20mA, ISB2 ; from 10mA to 20mA.  
0.2  
0.3  
1. Changed tCD from 4.0ns to 4.2ns at -75  
2. Changed DC condition at Icc and parameters  
ISB1 ; from 20mA to 30mA,  
Sep. 09. 1998  
Oct. 15. 1998  
Preliminary  
Preliminary  
ISB2 ; from 20mA to 30mA.  
1. ADD 119BGA(7x17 Ball Grid Array Package) .  
2. ADD x32 organization.  
0.4  
1.0  
1.Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.  
Dec. 23 .1998  
Jan. 29. 1999  
Preliminary  
Final  
1. Final Spec Release.  
2. Remove x32 organization.  
2.0  
3.0  
4.0  
1. Remove VDDQ Supply voltage( 2.5V I/O )  
Feb. 25. 1999  
Mar. 22. 1999  
May. 13. 1999  
Nov. 19. 1999  
Final  
Final  
Final  
Final  
1. Changed tOE from 4.2ns to 3.8ns at -75 , from 5.0ns to 3.8ns at -10  
1. Add VDDQ Supply voltage( 2.5V I/O )  
1. Add tCYC 167MHz and 200MHz.  
2. Remove 119BGA package.  
5.0  
3. Changed DC condition at Icc and parameters  
Icc ; from 420mA to 350mA at -67,  
from 370mA to 300mA at -75,  
from 300mA to 250mA at -10,  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
November 1999  
Rev 5.0  

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