Datasheet > KM718V949T-75T

KM718V949T-75T

更新时间： 2024-11-15 10:26:03

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
17页	390K
描述
ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

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KM718V949T-75T 数据手册

KM736V849

KM718V949

256Kx36 & 512Kx18 Pipelined NtRAM^TM

Document Title

256Kx36-Bit Pipelined NtRAM^TM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

1. Initial document.

June. 09. 1998

Aug. 19. 1998

Preliminary

1. Changed DC parameters

ICC; from 450mA to 420mA at 150MHZ.

ISB1; from 10mA to 20mA, ISB2 ; from 10mA to 20mA.

0.2

0.3

1. Changed tCD from 4.0ns to 4.2ns at -75

2. Changed DC condition at Icc and parameters

ISB1 ; from 20mA to 30mA,

Sep. 09. 1998

Oct. 15. 1998

Preliminary

ISB2 ; from 20mA to 30mA.

1. ADD 119BGA(7x17 Ball Grid Array Package) .

2. ADD x32 organization.

0.4

1.0

1.Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

Dec. 23 .1998

Jan. 29. 1999

Preliminary

Final

1. Final Spec Release.

2. Remove x32 organization.

2.0

3.0

4.0

1. Remove VDDQ Supply voltage( 2.5V I/O )

Feb. 25. 1999

Mar. 22. 1999

May. 13. 1999

Nov. 19. 1999

Final

1. Changed tOE from 4.2ns to 3.8ns at -75 , from 5.0ns to 3.8ns at -10

1. Add VDDQ Supply voltage( 2.5V I/O )

1. Add tCYC 167MHz and 200MHz.

2. Remove 119BGA package.

5.0

3. Changed DC condition at Icc and parameters

Icc ; from 420mA to 350mA at -67,

from 370mA to 300mA at -75,

from 300mA to 250mA at -10,

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

November 1999

Rev 5.0

12 3 4 5 6 7...17

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