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KM718V887T-8 PDF预览

KM718V887T-8

更新时间: 2024-11-14 14:51:55
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
16页 438K
描述
Cache SRAM, 256KX18, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

KM718V887T-8 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:8 ns
其他特性:SELF TIMED WRITE CYCLE; BYTE WRITE最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:4718592 bit内存集成电路类型:CACHE SRAM
内存宽度:18功能数量:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX18输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.02 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.325 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

KM718V887T-8 数据手册

 浏览型号KM718V887T-8的Datasheet PDF文件第2页浏览型号KM718V887T-8的Datasheet PDF文件第3页浏览型号KM718V887T-8的Datasheet PDF文件第4页浏览型号KM718V887T-8的Datasheet PDF文件第5页浏览型号KM718V887T-8的Datasheet PDF文件第6页浏览型号KM718V887T-8的Datasheet PDF文件第7页 
KM718V887  
256Kx18 Synchronous SRAM  
Document Title  
256Kx18-Bit Synchronous Burst SRAM  
Revision History  
Rev.No. History  
Draft Date  
Remark  
Preliminary  
Preliminary  
0.0  
0.1  
Initial draft  
May. 15. 1997  
Modify power down cycle timing & Interleaved read timing,  
Insert Note 4 at AC timing characteristics.  
Change ISB1 value from 10mA to 30mA.  
February. 11. 1998  
Change ISB2 value from 10mA to 20mA.  
Preliminary  
Preliminary  
0.2  
0.3  
Change Undershoot spec  
April. 14. 1998  
May 13. 1998  
from -3.0V(pulse width£20ns) to -2.0V(pulse width£tCYC/2)  
Add Overshoot spec 4.6V((pulse width£tCYC/2)  
Change VIH max from 5.5V to VDD+0.5V  
Change ISB2 value from 20mA to 30mA.  
Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V.  
Final  
Final  
1.0  
2.0  
Final spec Release  
May 15. 1998  
Dec. 02. 1998  
Add VDDQ Supply voltage( 2.5V )  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Dec. 1998  
Rev. 2.0  
- 1 -  

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