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KM23V32005BT-10 PDF预览

KM23V32005BT-10

更新时间: 2024-11-25 15:36:23
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
5页 87K
描述
MASK ROM, 2MX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

KM23V32005BT-10 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.84
最长访问时间:100 ns其他特性:USER SELECTABLE 3.3V VCC; CONFIGURABLE AS 2M X 16; PAGE MODE ACCESS TIME 30NS
备用内存宽度:8JESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:33554432 bit
内存集成电路类型:MASK ROM内存宽度:16
功能数量:1端子数量:44
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

KM23V32005BT-10 数据手册

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KM23V32005B(E)T  
CMOS MASK ROM  
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· Switchable organization  
4,194,304 x 8(byte mode)  
2,097,152 x 16(word mode)  
· Fast access time  
The KM23V32005B(E)T is a fully static mask programmable  
ROM fabricated using silicon gate CMOS process technology,  
and is organized either as 4,194,304x8 bit(byte mode) or as  
2,097,152x16 bit(word mode) depending on BHE voltage  
level.(See mode selection table)  
Random Access Time : 100ns(Max.)  
Page Access Time  
: 30ns(Max.)  
This device includes page read mode function, page read mode  
allows 8 words(or 16 bytes) of data to read fast in the same  
page, CE and A3 ~ A20 should not be changed.  
· 8 words/ 16 bytes page access  
· Supply voltage : single +3.3V  
· Current consumption  
This device operates with a 3.3V power supply, and all inputs  
and outputs are TTL compatible.  
Operating : 60mA(Max.)  
Standby : 30mA(Max.)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
· Package  
-. KM23V32005B(E)T : 44-TSOP2-400  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
The KM23V32005B(E)T is packaged in a 44-TSOP2.  
PRODUCT INFORMATION  
FUNCTIONAL BLOCK DIAGRAM  
Operating  
Temp Range  
Vcc Range  
(Typical)  
Speed  
(ns)  
Product  
A20  
X
MEMORY CELL  
MATRIX  
(2,097,152x16/  
4,194,304x8)  
BUFFERS  
AND  
DECODER  
.
.
.
.
.
.
.
.
KM23V32005BT  
KM23V32005BET  
0°C~70°C  
3.3V  
100/30  
-20°C~85°C  
Y
SENSE AMP.  
PIN CONFIGURATION  
BUFFERS  
AND  
DECODER  
DATA OUT  
BUFFERS  
A3  
N.C  
A18  
A20  
A19  
A8  
1
2
44  
43  
42  
41  
40  
39  
A0~A2  
A-1  
A17  
A7  
3
.
.
.
4
A9  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
A10  
A11  
5
CE  
6
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
OE  
38 A12  
37 A13  
7
8
BHE  
A14  
36  
9
A15  
35  
10  
11  
A16  
34  
33  
32  
31  
30  
TSOP2  
Pin Name  
A0 - A2  
Pin Function  
Page Address Inputs  
BHE  
VSS  
CE 12  
VSS  
13  
OE 14  
Q15/A-1  
Q7  
A3 - A20  
Q0 - Q14  
Address Inputs  
Data Outputs  
Q0  
Q8  
15  
16  
17  
18  
29 Q14  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q1  
Q9  
Q6  
28  
27  
26  
25  
24  
23  
Q15 /A-1  
Q13  
Q5  
Q2 19  
BHE  
CE  
Word/Byte selection  
Chip Enable  
Q10 20  
Q12  
Q4  
Q3  
21  
22  
Q11  
VCC  
OE  
Output Enable  
Power (3.3V)  
Ground  
VCC  
VSS  
N.C  
KM23V32005B(E)T  
No Connection  

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