Datasheet > KM23V32005BT-12

KM23V32005BT-12

更新时间： 2024-11-22 09:47:59

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
5页	87K
描述
MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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中文翻译

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KM23V32005BT-12 数据手册

KM23V32005B(E)T

CMOS MASK ROM

32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· Switchable organization

4,194,304 x 8(byte mode)

2,097,152 x 16(word mode)

· Fast access time

The KM23V32005B(E)T is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 4,194,304x8 bit(byte mode) or as

2,097,152x16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

Random Access Time : 100ns(Max.)

Page Access Time

: 30ns(Max.)

This device includes page read mode function, page read mode

allows 8 words(or 16 bytes) of data to read fast in the same

page, CE and A3 ~ A20 should not be changed.

· 8 words/ 16 bytes page access

· Supply voltage : single +3.3V

· Current consumption

This device operates with a 3.3V power supply, and all inputs

and outputs are TTL compatible.

Operating : 60mA(Max.)

Standby : 30mA(Max.)

· Fully static operation

· All inputs and outputs TTL compatible

· Three state outputs

· Package

-. KM23V32005B(E)T : 44-TSOP2-400

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The KM23V32005B(E)T is packaged in a 44-TSOP2.

PRODUCT INFORMATION

FUNCTIONAL BLOCK DIAGRAM

Operating

Temp Range

Vcc Range

(Typical)

Speed

(ns)

Product

A20

MEMORY CELL

MATRIX

(2,097,152x16/

4,194,304x8)

BUFFERS

AND

DECODER

KM23V32005BT

KM23V32005BET

0°C~70°C

3.3V

100/30

-20°C~85°C

SENSE AMP.

PIN CONFIGURATION

BUFFERS

AND

DECODER

DATA OUT

BUFFERS

N.C

A18

A20

A19

A0~A2

A-1

A17

A10

A11

Q0/Q8

Q7/Q15

CONTROL

LOGIC

38 A12

37 A13

BHE

A14

A15

A16

TSOP2

Pin Name

A0 - A2

Pin Function

Page Address Inputs

BHE

VSS

CE 12

VSS

OE 14

Q15/A-1

A3 - A20

Q0 - Q14

Address Inputs

Data Outputs

29 Q14

Output 15(Word mode)/

LSB Address(Byte mode)

Q15 /A-1

Q13

Q2 19

BHE

Word/Byte selection

Chip Enable

Q10 20

Q12

Q11

VCC

Output Enable

Power (3.3V)

Ground

VCC

VSS

N.C

KM23V32005B(E)T

No Connection

12 3 4 5

中文翻译

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与KM23V32005BT-12相关器件

型号	品牌	获取价格	描述	数据表
KM23V32005BT-15	SAMSUNG	获取价格	MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM23V32005BTY	SAMSUNG	获取价格	MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
KM23V32005BTY-10	SAMSUNG	获取价格	MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
KM23V32005DETY-10	SAMSUNG	获取价格	MASK ROM, 2MX16, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
KM23V32005DTY-10	SAMSUNG	获取价格	MASK ROM, 2MX16, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48
KM23V4000B-15	SAMSUNG	获取价格	MASK ROM, 512KX8, 150ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
KM23V4000BG-15	SAMSUNG	获取价格	MASK ROM, 512KX8, 150ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
KM23V4000DETG	SAMSUNG	获取价格	MASK ROM, 512KX8, 95ns, CMOS, PDSO32, 8 X 13.40 MM, TSOP1-32
KM23V4000DETY	SAMSUNG	获取价格	MASK ROM, 512KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32
KM23V4000DETY-12	SAMSUNG	获取价格	MASK ROM, 512KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

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