生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.65 | 雪崩能效等级(Eas): | 270 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 4.3 A | 最大漏源导通电阻: | 1.4 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 13 A |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KF5N50DS_15 | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50DZ | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50DZ-DS_15 | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50DZ-IZ_15 | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50F | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50FR | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50FS | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50FSA | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50FZ | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF5N50FZA | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |