Datasheet > KF5N65P

KF5N65P

更新时间： 2024-11-24 01:23:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	403K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

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KF5N65P 数据手册

KF5N65P/F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF5N65P

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

0.8+ 0.1

3.6 0.2

FEATURES

2.8 + 0.1

3.7

· V_DSS= 650V, I_D= 5A

0.5+0.1/-0.05

1.5

· Drain-Source ON Resistance : R_DS(ON)=1.75Ω (Max) @V_GS= 10V

· Qg(typ) = 14.5nC

13.08+ 0.3

1.46

1.4 + 0.1

1.27+ 0.1

2.54+ 0.2

4.5 0.2

2.4 0.2

9.2 + 0.2

1. GATE

2. DRAIN

3. SOURCE

MAXIMUM RATING (Tc=25℃)

RATING

KF5N65P KF5N65F

CHARACTERISTIC

SYMBOL

UNIT

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

650

±30

TO-220AB

I_D

Drain Current

@T_C=100℃

3.0

3.0*

KF5N65F

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

150

Repetitive Avalanche Energy

(Note 1)

DIM MILLIMETERS

E_AR

3.8

4.5

10.16 0.2

15.87 0.2

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

2.54 0.2

0.8 0.1

100

0.8

41.7

0.33

W/℃

℃

Tc=25℃

Drain Power

Dissipation

3.18

0.1

P_D

3.3 0.1

12.57 0.2

Derate above 25℃

0.5 0.1

T_j

Maximum Junction Temperature

Storage Temperature Range

150

13.0 0.5

3.23 0.1

T_stg

-55∼ 150

℃

1.47 MAX

Thermal Characteristics

2.54 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.25

62.5

3.0

℃/W

6.68 0.2

4.7

0.2

Thermal Resistance, Junction-to-

Ambient

1. GATE

2.76 0.2

62.5

2. DRAIN

3. SOURCE

* Single Gauge Lead Frame

PIN CONNECTION

TO-220IS (1)

2014. 12. 16

Revision No : 1

1/7

12 3 4 5 6 7

中文翻译

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