Datasheet > KF6N60D_15

KF6N60D_15

更新时间： 2024-11-20 01:15:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	488K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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数据手册

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KF6N60D_15 数据手册

KF6N60D/I

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF6N60D

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

2.30+0.10

0.96 MAX

0.90 MAX

FEATURES

1.80+0.20

· V_DSS(Min.)= 600V, I_D= 5A

· R_DS(ON)=1.4 Ω (Max) @V_GS=10V

· Qg(typ.) =16nC

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

0.1 MAX

1. GATE

2. DRAIN

3. SOURCE

MAXIMUM RATING (Tc=25℃)

RATING

CHARACTERISTIC

SYMBOL

UNIT

KF6N60D/I

DPAK (1)

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

600

±30

KF6N60I

I_D

Drain Current

@T_C=100℃

3.15

15*

I_DP

Pulsed (Note1)

DIM MILLIMETERS

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

Peak Diode Recovery dv/dt

(Note 3)

6.6 0.2

E_AS

180

6.1 0.2

5.34 0.3

0.7 0.2

E_AR

9.3 0.3

2.3 0.2

0.76 0.1

2.3 0.1

dv/dt

4.5

V/ns

0.5 0.1

69.4

0.56

W/℃

℃

Tc=25℃

Drain Power

Dissipation

1.8 0.2

P_D

0.5

0.1

Derate above25℃

1.0 0.1

0.96 MAX

T_j

Maximum Junction Temperature

Storage Temperature Range

150

1.02 0.3

1. GATE

2. DRAIN

3. SOURCE

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.8

℃/W

IPAK(1)

Thermal Resistance, Junction-to-

Ambient

110

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2011. 7. 25

Revision No : 0

1/6

12 3 4 5 6

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