Datasheet > KF60N06P

KF60N06P

更新时间： 2024-11-23 05:40:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	83K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF60N06P 数据手册

KF60N06P

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction , electronic lamp ballasts based on half bridge topology,

DC/DC Converters and switching mode power supplies.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

0.8 + 0.1

3.6 0.2

FEATURES

2.8 + 0.1

V_DSS= 60V, I_D= 60A

3.7

0.5+0.1/-0.05

1.5

Drain-Source ON Resistance :

R_DS(ON)=13.2m (Max.) @V_GS= 10V

Qg(typ.) = 48nC

13.08 + 0.3

1.46

1.4 0.1

1.27 0.1

2.54 0.2

4.5 0.2

MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)

2.4 0.2

9.2 +0.2

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

UNIT

V_GSS

±20

TO-220AB

I_D*

Drain Current

@T_C=100℃

I_DP

Pulsed (Note1)

230

Single Pulsed Avalanche Energy

(Note 2)

E_AS

430

13.5

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

113

0.90

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.1

℃/W

Thermal Resistance,

Junction-to-Ambient

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2009. 12.21

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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