Datasheet > KF7N50P_15

KF7N50P_15

更新时间： 2024-11-20 01:15:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	1225K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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KF7N50P_15 数据手册

KF7N50P/F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF7N50P

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

DIM

FEATURES

· V_DSS(Min.)= 500V, I_D= 7A

· R_DS(ON)=1.0 Ω (Max) @V_GS=10V

· Qg(typ.) =16nC

MAXIMUM RATING (Tc=25℃)

RATING

CHARACTERISTIC

SYMBOL

UNIT

KF7N50P

KF7N50F

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

500

±30

KF7N50F

I_D

Drain Current

@T_C=100℃

4.4

4.4*

21*

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

E_AS

180

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

100

0.8

41.7

0.33

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.25

62.5

3.0

℃/W

Thermal Resistance, Junction-to-

Ambient

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2011. 6. 23

Revision No : 0

1/2

12 3 4 5 6 7

中文翻译

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