Datasheet > KF5N50DS_15

KF5N50DS_15

更新时间： 2024-11-20 02:55:35

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	69K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

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KF5N50DS_15 数据手册

KF5N50DR/DS

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

FEATURES

2.30+0.10

0.96 MAX

0.90 MAX

· V_DSS= 500V, I_D= 4.3A

1.80+0.20

· Drain-Source ON Resistance : R_DS(ON)=1.4Ω (Max) @V_GS= 10V

· Qg(typ) = 12nC

2.30+0.10

0.50 + 0.10

0.50+0.10

· t_rr(typ) = 150ns

0.70 MIN

℃

)

MAXIMUM RATING (Tc=25

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

1. GATE

2. DRAIN

3. SOURCE

SYMBOL

V_DSS

RATING

500

UNIT

V_GSS

±30

4.3

I_D

DPAK (1)

Drain Current

@T_C=100℃

2.7

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

270

8.6

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

59.5

0.48

W/℃

℃

Tc=25℃

Derate above 25℃

Drain Power

Dissipation

P_D

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

2.1

℃/W

Thermal Resistance, Junction-to-

Ambient

110

PIN CONNECTION

(KF5N50DR)

(KF5N50DS)

2008. 12. 3

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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