Datasheet > KF5N65D_15

KF5N65D_15

更新时间： 2024-11-20 01:15:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	487K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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KF5N65D_15 数据手册

KF5N65D/I

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF5N65D

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

FEATURES

2.30+0.10

0.96 MAX

0.90 MAX

· V_DSS= 650V, I_D= 4.4A

1.80+0.20

· Drain-Source ON Resistance : R_DS(ON)=1.75Ω (Max) @V_GS= 10V

· Qg(typ) = 14.5nC

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

0.1 MAX

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

650

UNIT

V_GSS

±30

4.4

DPAK (1)

I_D

Drain Current

@T_C=100℃

2.7

KF5N65I

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

150

3.8

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

DIM MILLIMETERS

6.6

0.2

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

6.1 0.2

5.34 0.3

0.7 0.2

69.4

0.56

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

9.3 0.3

Derate above 25℃

2.3 0.2

0.76 0.1

T_j

Maximum Junction Temperature

Storage Temperature Range

150

2.3 0.1

0.5 0.1

T_stg

-55∼ 150

℃

1.8 0.2

0.5

0.1

Thermal Characteristics

1.0 0.1

0.96 MAX

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.8

℃/W

1.02 0.3

Thermal Resistance, Junction-to-

Ambient

110

PIN CONNECTION

IPAK(1)

2011. 10. 27

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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