Datasheet > KF5N50FSA

KF5N50FSA

更新时间： 2024-11-23 11:29:35

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	720K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册
替代型号

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KF5N50FSA 数据手册

KF5N50FZA/FSA

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

FEATURES

· V_DSS= 500V, I_D= 5.0A

· Drain-Source ON Resistance : R_DS(ON)=1.4Ω @V_GS= 10V

· Qg(typ) = 12nC

· t_rr(typ)= 150ns (KF5N50FSA)

· t_rr(typ)= 300ns (KF5N50FZA)

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

500

UNIT

V_GSS

±30

5.0*

I_D

Drain Current

@T_C=100℃

2.9*

I_DP

Pulsed (Note1)

13*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

270

8.6

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

37.9

0.30

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

3.3

℃/W

Thermal Resistance, Junction-to-

Ambient

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2010. 8. 25

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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KF5N50FSA 替代型号

型号	品牌	替代类型	描述	数据表
UF830G-TF3-T	UTC	功能相似	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
KF5N50FS	KEC	功能相似	N CHANNEL MOS FIELD EFFECT TRANSISTOR

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