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KF5N50FZ

更新时间: 2024-11-09 05:40:51
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
7页 81K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF5N50FZ 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.68
Base Number Matches:1

KF5N50FZ 数据手册

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KF5N50P/F/PZ/FZ  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF5N50P, KF5N50PZ  
A
O
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for electronic ballast and  
switching mode power supplies.  
C
F
E
I
DIM MILLIMETERS  
G
_
9.9 + 0.2  
A
B
C
D
E
F
B
15.95 MAX  
1.3+0.1/-0.05  
Q
_
0.8+ 0.1  
FEATURES  
_
3.6 0.2  
+
_
2.8+ 0.1  
· VDSS= 500V, ID= 5.0A  
K
P
3.7  
G
H
I
· Drain-Source ON Resistance : RDS(ON)=1.4@VGS = 10V  
· Qg(typ) = 12nC  
M
N
0.5+0.1/-0.05  
1.5  
L
J
_
13.08+ 0.3  
J
K
L
M
N
O
P
D
1.46  
_
1.4 + 0.1  
H
N
_
1.27+ 0.1  
_
2.54+ 0.2  
)
MAXIMUM RATING (Tc=25  
_
+
4.5 0.2  
_
+
2.4 0.2  
RATING  
_
9.2 + 0.2  
Q
CHARACTERISTIC  
SYMBOL  
UNIT  
1
2
3
1. GATE  
KF5N50P  
KF5N50F  
2. DRAIN  
3. SOURCE  
KF5N50PZ  
KF5N50FZ  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
500  
V
V
±30  
TO-220AB  
5.0  
2.9  
13  
5.0*  
2.9*  
13*  
ID  
Drain Current  
@TC=100℃  
A
KF5N50F, KF5N50FZ  
IDP  
Pulsed (Note1)  
A
C
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
270  
8.6  
4.5  
mJ  
mJ  
S
Repetitive Avalanche Energy  
(Note 1)  
MILLIMETERS  
_
E
DIM  
EAR  
A
B
C
D
E
F
10.0  
15.0  
2.70  
+
0.3  
0.3  
0.3  
_
+
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
_
+
0.76+0.09/-0.05  
_
83  
41.5  
0.33  
W
W/℃  
Tc=25℃  
Φ3.2+0.2  
Drain Power  
Dissipation  
PD  
L
L
_
+
3.0  
0.3  
R
0.66  
Derate above 25℃  
_
+
0.3  
G
H
J
12.0  
0.5+0.1/-0.05  
M
Tj  
Maximum Junction Temperature  
150  
_
13.6 0.5  
+
D
D
_
3.7 0.2  
+
K
L
M
N
P
Tstg  
Storage Temperature Range  
Thermal Characteristics  
-55150  
1.2+0.25/-0.1  
1.5+0.25/-0.1  
_
N
N
H
+
2.54 0.1  
_
+
6.8 0.1  
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
1.5  
3.0  
62.5  
/W  
/W  
_
Q
R
S
4.5 0.2  
+
Thermal Resistance, Junction-to-  
Ambient  
_
2.6 0.2  
+
62.5  
0.5 Typ  
3
2
1
1. GATE  
2. DRAIN  
3. SOURCE  
* : Drain current limited by maximum junction temperature.  
PIN CONNECTION  
TO-220IS  
(KF5N50P, KF5N50F)  
(KF5N50PZ, KF5N50FZ)  
D
D
G
G
S
S
2008. 11. 19  
Revision No : 0  
1/7  

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