KF5N50P/F/PZ/FZ
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF5N50P, KF5N50PZ
A
O
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
C
F
E
I
DIM MILLIMETERS
G
_
9.9 + 0.2
A
B
C
D
E
F
B
15.95 MAX
1.3+0.1/-0.05
Q
_
0.8+ 0.1
FEATURES
_
3.6 0.2
+
_
2.8+ 0.1
· VDSS= 500V, ID= 5.0A
K
P
3.7
G
H
I
· Drain-Source ON Resistance : RDS(ON)=1.4Ω @VGS = 10V
· Qg(typ) = 12nC
M
N
0.5+0.1/-0.05
1.5
L
J
_
13.08+ 0.3
J
K
L
M
N
O
P
D
1.46
_
1.4 + 0.1
H
N
_
1.27+ 0.1
_
2.54+ 0.2
℃
)
MAXIMUM RATING (Tc=25
_
+
4.5 0.2
_
+
2.4 0.2
RATING
_
9.2 + 0.2
Q
CHARACTERISTIC
SYMBOL
UNIT
1
2
3
1. GATE
KF5N50P
KF5N50F
2. DRAIN
3. SOURCE
KF5N50PZ
KF5N50FZ
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
500
V
V
±30
TO-220AB
5.0
2.9
13
5.0*
2.9*
13*
ID
Drain Current
@TC=100℃
A
KF5N50F, KF5N50FZ
IDP
Pulsed (Note1)
A
C
Single Pulsed Avalanche Energy
(Note 2)
EAS
270
8.6
4.5
mJ
mJ
S
Repetitive Avalanche Energy
(Note 1)
MILLIMETERS
_
E
DIM
EAR
A
B
C
D
E
F
10.0
15.0
2.70
+
0.3
0.3
0.3
_
+
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
_
+
0.76+0.09/-0.05
_
83
41.5
0.33
W
W/℃
℃
Tc=25℃
Φ3.2+0.2
Drain Power
Dissipation
PD
L
L
_
+
3.0
0.3
R
0.66
Derate above 25℃
_
+
0.3
G
H
J
12.0
0.5+0.1/-0.05
M
Tj
Maximum Junction Temperature
150
_
13.6 0.5
+
D
D
_
3.7 0.2
+
K
L
M
N
P
Tstg
Storage Temperature Range
Thermal Characteristics
-55∼ 150
℃
1.2+0.25/-0.1
1.5+0.25/-0.1
_
N
N
H
+
2.54 0.1
_
+
6.8 0.1
RthJC
RthJA
Thermal Resistance, Junction-to-Case
1.5
3.0
62.5
℃/W
℃/W
_
Q
R
S
4.5 0.2
+
Thermal Resistance, Junction-to-
Ambient
_
2.6 0.2
+
62.5
0.5 Typ
3
2
1
1. GATE
2. DRAIN
3. SOURCE
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
TO-220IS
(KF5N50P, KF5N50F)
(KF5N50PZ, KF5N50FZ)
D
D
G
G
S
S
2008. 11. 19
Revision No : 0
1/7