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KF5N50FR

更新时间: 2024-11-09 05:40:51
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
7页 77K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF5N50FR 数据手册

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KF5N50PR/FR/PS/FS  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF5N50PR, KF5N50PS  
A
O
This planar stripe MOSFET has better characteristics, such as fast  
switching time, fast reverse recovery time, low on resistance, low gate  
charge and excellent avalanche characteristics. It is mainly suitable for  
electronic ballast and switching mode power supplies.  
C
F
E
I
DIM MILLIMETERS  
_
G
A
B
C
D
E
F
9.9 + 0.2  
B
15.95 MAX  
1.3+0.1/-0.05  
Q
_
0.8+ 0.1  
FEATURES  
_
3.6 0.2  
+
_
2.8+ 0.1  
· VDSS= 500V, ID= 5.0A  
· Drain-Source ON Resistance : RDS(ON)=1.4@VGS = 10V  
· Qg(typ) = 12nC  
K
P
3.7  
G
H
I
M
N
0.5+0.1/-0.05  
1.5  
L
J
_
J
13.08+ 0.3  
K
L
M
N
O
P
D
1.46  
· trr(typ) = 150ns  
_
1.4 + 0.1  
H
N
_
)
MAXIMUM RATING (Tc=25  
1.27+ 0.1  
_
2.54+ 0.2  
_
+
4.5 0.2  
_
+
2.4 0.2  
RATING  
_
9.2 + 0.2  
Q
CHARACTERISTIC  
SYMBOL  
UNIT  
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
KF5N50PR  
KF5N50FR  
KF5N50FS  
KF5N50PS  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
500  
V
V
±30  
TO-220AB  
5.0  
2.9  
13  
5.0*  
2.9*  
13*  
ID  
Drain Current  
@TC=100℃  
A
KF5N50FR, KF5N50FS  
IDP  
Pulsed (Note1)  
A
C
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
270  
8.6  
20  
mJ  
mJ  
S
Repetitive Avalanche Energy  
(Note 1)  
MILLIMETERS  
_
E
DIM  
EAR  
A
B
C
D
E
F
10.0  
15.0  
2.70  
+
0.3  
0.3  
0.3  
_
+
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
_
+
0.76+0.09/-0.05  
_
83  
41.5  
0.33  
W
W/℃  
Tc=25℃  
Φ3.2+0.2  
Drain Power  
Dissipation  
PD  
L
L
_
+
3.0  
0.3  
R
0.66  
Derate above 25℃  
_
G
H
J
12.0  
0.5+0.1/-0.05  
+
0.3  
M
Tj  
Maximum Junction Temperature  
150  
_
13.6 0.5  
+
D
D
_
K
L
M
N
P
3.7 0.2  
+
Tstg  
Storage Temperature Range  
Thermal Characteristics  
-55150  
1.2+0.25/-0.1  
1.5+0.25/-0.1  
_
N
N
H
+
2.54 0.1  
_
RthJC  
RthJA  
6.8 0.1  
+
Thermal Resistance, Junction-to-Case  
1.5  
3.0  
62.5  
/W  
/W  
_
Q
R
S
4.5 0.2  
+
Thermal Resistance, Junction-to-  
Ambient  
_
2.6 0.2  
+
62.5  
0.5 Typ  
3
2
1
1. GATE  
* : Drain current limited by maximum junction temperature.  
2. DRAIN  
3. SOURCE  
PIN CONNECTION  
TO-220IS  
(KF5N50PR, KF5N50FR)  
(KF5N50PS, KF5N50FS)  
D
D
G
G
S
S
2008. 10. 10  
Revision No : 0  
1/7  

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