KF5N50PR/FR/PS/FS
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF5N50PR, KF5N50PS
A
O
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
C
F
E
I
DIM MILLIMETERS
_
G
A
B
C
D
E
F
9.9 + 0.2
B
15.95 MAX
1.3+0.1/-0.05
Q
_
0.8+ 0.1
FEATURES
_
3.6 0.2
+
_
2.8+ 0.1
· VDSS= 500V, ID= 5.0A
· Drain-Source ON Resistance : RDS(ON)=1.4Ω @VGS = 10V
· Qg(typ) = 12nC
K
P
3.7
G
H
I
M
N
0.5+0.1/-0.05
1.5
L
J
_
J
13.08+ 0.3
K
L
M
N
O
P
D
1.46
· trr(typ) = 150ns
_
1.4 + 0.1
H
N
_
℃
)
MAXIMUM RATING (Tc=25
1.27+ 0.1
_
2.54+ 0.2
_
+
4.5 0.2
_
+
2.4 0.2
RATING
_
9.2 + 0.2
Q
CHARACTERISTIC
SYMBOL
UNIT
1
2
3
1. GATE
2. DRAIN
3. SOURCE
KF5N50PR
KF5N50FR
KF5N50FS
KF5N50PS
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
500
V
V
±30
TO-220AB
5.0
2.9
13
5.0*
2.9*
13*
ID
Drain Current
@TC=100℃
A
KF5N50FR, KF5N50FS
IDP
Pulsed (Note1)
A
C
Single Pulsed Avalanche Energy
(Note 2)
EAS
270
8.6
20
mJ
mJ
S
Repetitive Avalanche Energy
(Note 1)
MILLIMETERS
_
E
DIM
EAR
A
B
C
D
E
F
10.0
15.0
2.70
+
0.3
0.3
0.3
_
+
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
_
+
0.76+0.09/-0.05
_
83
41.5
0.33
W
W/℃
℃
Tc=25℃
Φ3.2+0.2
Drain Power
Dissipation
PD
L
L
_
+
3.0
0.3
R
0.66
Derate above 25℃
_
G
H
J
12.0
0.5+0.1/-0.05
+
0.3
M
Tj
Maximum Junction Temperature
150
_
13.6 0.5
+
D
D
_
K
L
M
N
P
3.7 0.2
+
Tstg
Storage Temperature Range
Thermal Characteristics
-55∼ 150
℃
1.2+0.25/-0.1
1.5+0.25/-0.1
_
N
N
H
+
2.54 0.1
_
RthJC
RthJA
6.8 0.1
+
Thermal Resistance, Junction-to-Case
1.5
3.0
62.5
℃/W
℃/W
_
Q
R
S
4.5 0.2
+
Thermal Resistance, Junction-to-
Ambient
_
2.6 0.2
+
62.5
0.5 Typ
3
2
1
1. GATE
* : Drain current limited by maximum junction temperature.
2. DRAIN
3. SOURCE
PIN CONNECTION
TO-220IS
(KF5N50PR, KF5N50FR)
(KF5N50PS, KF5N50FS)
D
D
G
G
S
S
2008. 10. 10
Revision No : 0
1/7