Datasheet > KF5N50F

KF5N50F

更新时间： 2024-11-19 05:40:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	81K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF5N50F 数据手册

KF5N50P/F/PZ/FZ

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF5N50P, KF5N50PZ

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

0.8+ 0.1

FEATURES

3.6 0.2

2.8+ 0.1

· V_DSS= 500V, I_D= 5.0A

3.7

· Drain-Source ON Resistance : R_DS(ON)=1.4Ω @V_GS= 10V

· Qg(typ) = 12nC

0.5+0.1/-0.05

1.5

13.08+ 0.3

1.46

1.4 + 0.1

1.27+ 0.1

2.54+ 0.2

℃

)

MAXIMUM RATING (Tc=25

4.5 0.2

2.4 0.2

RATING

9.2 + 0.2

CHARACTERISTIC

SYMBOL

UNIT

1. GATE

KF5N50P

KF5N50F

2. DRAIN

3. SOURCE

KF5N50PZ

KF5N50FZ

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

500

±30

TO-220AB

5.0

2.9

5.0*

2.9*

13*

I_D

Drain Current

@T_C=100℃

KF5N50F, KF5N50FZ

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

270

8.6

4.5

Repetitive Avalanche Energy

(Note 1)

MILLIMETERS

DIM

E_AR

10.0

15.0

2.70

0.3

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

0.76+0.09/-0.05

41.5

0.33

W/℃

℃

Tc=25℃

Φ3.2+0.2

Drain Power

Dissipation

P_D

3.0

0.3

0.66

Derate above 25℃

0.3

12.0

0.5+0.1/-0.05

T_j

Maximum Junction Temperature

150

13.6 0.5

3.7 0.2

T_stg

Storage Temperature Range

Thermal Characteristics

-55∼ 150

℃

1.2+0.25/-0.1

1.5+0.25/-0.1

2.54 0.1

6.8 0.1

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.5

3.0

62.5

℃/W

4.5 0.2

Thermal Resistance, Junction-to-

Ambient

2.6 0.2

62.5

0.5 Typ

1. GATE

2. DRAIN

3. SOURCE

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

TO-220IS

(KF5N50P, KF5N50F)

(KF5N50PZ, KF5N50FZ)

2008. 11. 19

Revision No : 0

1/7

12 3 4 5 6 7

中文翻译

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