Datasheet > KDS114WS

KDS114WS

更新时间： 2024-11-18 05:40:47

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
3页	259K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

获取价格

数据手册

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KDS114WS 数据手册

KDS114WS

SILICON EPITAXIAL PLANAR DIODE

Features

PINNING

• Small package

DESCRIPTION

Cathode

• Small total capacitance

• Low series resistance

Anode

Applications

Top View

Marking Code: "W7"

• VHF tuner band switch

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Forward Current

I_F

100

Junction Temperature Range

Storage Temperature Range

T_J

150

T_stg

- 55 to + 150

Electrical Characteristics (T_a= 25 C)

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at I_F= 2 mA

V_F

I_R

0.85

0.1

µA

Reverse Current

at V_R= 15 V

Reverse Voltage

at I_R= 1 µA

V_R

C_T

r_S

Total Capacitance

at V_R= 5 V, f = 1 MHz

1.2

Ω

Series Resistance

at I_F= 2 mA, f = 100 MHz

0.9

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 01/09/2006

12 3

中文翻译

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