Datasheet > KDS120V

KDS120V

更新时间： 2024-11-18 03:47:43

品牌	Logo	应用领域
KEC		二极管
页数	文件大小	规格书
1页	65K
描述
SILICON EPITAXIAL TYPE DIODE

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中文翻译

获取价格

数据手册

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KDS120V 数据手册

SEMICONDUCTOR

KDS120V

SILICON EPITAXIAL TYPE DIODE

TECHNICAL DATA

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

ᴌVery Small Package

ᴌLow Forward Voltage

: VSM.

: V_F=0.92V (Typ.).

ᴌFast Reverse Recovery Time : t_rr=1.6ns(Typ.).

ᴌSmall Total Capacitance : C_T=2.2pF (Typ.).

DIM MILLIMETERS

1.2 +0.05

0.8 +0.05

0.5+0.05

0.3+0.05

1.2+0.05

0.8+0.05

0.40

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

0.12+0.05

0.2+0.05

SYMBOL

V_RM

V_R

RATING

UNIT

Maximum (Peak) Reverse Voltage

Reverse Voltage

1. CATHODE 1

2. CATHODE 2

3. ANODE

I_FM

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10ms)

300 *

100 *

2 *

I_O

I_FSM

P_D

Power Dissipation

100

ᴱ

VSM

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55ᴕ150

ᴱ

Note : * Unit Rating. Total Rating=Unit Rating x 1.5

Marking

A 3

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

0.61

0.74

0.92

MAX.

UNIT

V_F(1)

V_F(2)

V_F(3)

I_R

I_F=1mA

I_F=10mA

Forward Voltage

I_F=100mA

V_R=80V

1.20

0.5

4.0

Reverse Current

ỌA

C_T

V_R=0, f=1MHz

I_F=10mA

Total Capacitance

Reverse Recovery Time

2.2

t_rr

1.6

2001. 7. 24

Revision No : 0

1/1

中文翻译

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