Datasheet > KDS127E

KDS127E

更新时间： 2024-11-18 11:29:27

品牌	Logo	应用领域
KEC		二极管局域网
页数	文件大小	规格书
3页	440K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

获取价格

数据手册

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KDS127E 数据手册

SEMICONDUCTOR

KDS127E

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

Low Forward Voltage

Fast Reverse Recovery Time

Small Total Capacitance

Ultra- Small Surface Mount Package

DIM MILLIMETERS

1.6+0.05

1.0+0.05

1.6+0.05

1.2+0.05

0.50

0.2+0.05

0.5+0.05

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.12+0.05

SYMBOL

V_RM

V_R

RATING

UNIT

Maximum (Peak) Reverse Voltage

Reverse Voltage

I_FM

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10ms)

300 *

100 *

2 *

1. D1 ANODE

2. D2 CATHODE

3. D3/D4 ANODE/CATHODE

4. D3 ANODE

5. D4 CATHODE

I_O

I_FSM

P_D

6. D1/D2 ANODE/CATHODE

Power Dissipation

200**

150

T_j

Junction Temperature

TES6

T_stg

Storage Temperature Range

-55 150

* Where D1, D2, D3, D4 are used independently or simultaneously,

the Maximum Ratings per diode are 50% of those of the single diode.

** Total Rating

EQUIVALENT CIRCUIT (TOP VIEW)

Marking

Type Name

U S

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Forward Voltage

SYMBOL

TEST CONDITION

I_F=100mA

MIN.

TYP.

MAX.

1.2

UNIT

V_F

I_R

V_R=80V

Reverse Current

0.1

C_T

V_R=6V, f=1MHz

Total Capacitance

3.5

2007. 10. 31

Revision No : 0

1/3

12 3

中文翻译

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