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K7B803625M-QC850 PDF预览

K7B803625M-QC850

更新时间: 2024-11-07 14:43:03
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
21页 575K
描述
Cache SRAM, 256KX36, 8.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7B803625M-QC850 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.91最长访问时间:8.5 ns
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100长度:20 mm
内存密度:9437184 bit内存集成电路类型:CACHE SRAM
内存宽度:36功能数量:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.13 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.33 mA最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
宽度:14 mmBase Number Matches:1

K7B803625M-QC850 数据手册

 浏览型号K7B803625M-QC850的Datasheet PDF文件第2页浏览型号K7B803625M-QC850的Datasheet PDF文件第3页浏览型号K7B803625M-QC850的Datasheet PDF文件第4页浏览型号K7B803625M-QC850的Datasheet PDF文件第5页浏览型号K7B803625M-QC850的Datasheet PDF文件第6页浏览型号K7B803625M-QC850的Datasheet PDF文件第7页 
K7B803625M  
K7B801825M  
256Kx36 & 512Kx18 Synchronous SRAM  
Document Title  
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM  
Revision History  
Rev.No.  
History  
Draft Date  
Remark  
0.0  
Initial draft  
April. 10 . 1998  
Preliminary  
0.1  
Change DC Characteristics.  
Aug. 31. 1998  
Preliminary  
ISB value from 60mA to 90mA at -8  
ISB value from 50mA to 80mA at -9  
ISB value from 40mA to 70mA at -10  
ISB1 value from 10mA to 30mA  
ISB2 value from 10mA to 30mA  
0.2  
1. Changed tCD from 8.0ns to 8.5ns at -8  
2. Changed tCYC from 13.0ns to 12.0ns at -10  
3. Changed DC condition at Icc and parameters  
ICC ; from 300mA to 350mA at -8,  
from 260mA to 300mA at -9,  
Sep. 09. 1998  
Preliminary  
from 220mA to 260mA at -10,  
ISB ; from 90mA to 130mA at -8,  
from 80mA to 120mA at -9,  
from 70mA to 110mA at -10,  
0.3  
1. ADD 119BGA(7x17 Ball Grid Array Package) .  
2. ADD x32 organization.  
Oct. 15. 1998  
Preliminary  
0.4  
0.5  
1.0  
Add VDDQ Supply voltage( 2.5V )  
Dec. 10. 1998  
Dec. 23. 1998  
Jan. 29. 1999  
Preliminary  
Preliminary  
Final  
Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.  
1. Final Spec Release.  
2. Remove x32 organization.  
2.0  
3.0  
1. Remove VDDQ supply voltage(2.5V)  
Feb. 25. 1999  
Mar. 30. 1999  
Final  
Final  
1. Changed ICC from 350mA to 330mA at -8.  
2. Add bin -7. (tCD 7.5ns).  
4.0  
5.0  
1. Add VDDQ supply voltage(2.5V)  
May. 13. 1999  
Nov. 19. 1999  
Final  
Final  
1. Changed tCYC from 12ns to 10ns at -9.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
November 1999  
- 1 -  
Rev 5.0  

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