Datasheet > K7B803625M-HC90

K7B803625M-HC90

更新时间： 2024-09-18 07:47:07

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
21页	575K
描述
Cache SRAM, 256KX36, 9ns, CMOS, PBGA119, BGA-119

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K7B803625M-HC90 数据手册

K7B803625M

K7B801825M

256Kx36 & 512Kx18 Synchronous SRAM

Document Title

256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

Revision History

Rev.No.

History

Draft Date

Remark

0.0

Initial draft

April. 10 . 1998

Preliminary

0.1

Change DC Characteristics.

Aug. 31. 1998

Preliminary

ISB value from 60mA to 90mA at -8

ISB value from 50mA to 80mA at -9

ISB value from 40mA to 70mA at -10

ISB1 value from 10mA to 30mA

ISB2 value from 10mA to 30mA

0.2

1. Changed tCD from 8.0ns to 8.5ns at -8

2. Changed tCYC from 13.0ns to 12.0ns at -10

3. Changed DC condition at Icc and parameters

ICC ; from 300mA to 350mA at -8,

from 260mA to 300mA at -9,

Sep. 09. 1998

Preliminary

from 220mA to 260mA at -10,

ISB ; from 90mA to 130mA at -8,

from 80mA to 120mA at -9,

from 70mA to 110mA at -10,

0.3

1. ADD 119BGA(7x17 Ball Grid Array Package) .

2. ADD x32 organization.

Oct. 15. 1998

Preliminary

0.4

0.5

1.0

Add VDDQ Supply voltage( 2.5V )

Dec. 10. 1998

Dec. 23. 1998

Jan. 29. 1999

Preliminary

Final

Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

1. Final Spec Release.

2. Remove x32 organization.

2.0

3.0

1. Remove VDDQ supply voltage(2.5V)

Feb. 25. 1999

Mar. 30. 1999

Final

1. Changed ICC from 350mA to 330mA at -8.

2. Add bin -7. (tCD 7.5ns).

4.0

5.0

1. Add VDDQ supply voltage(2.5V)

May. 13. 1999

Nov. 19. 1999

Final

1. Changed tCYC from 12ns to 10ns at -9.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

November 1999

- 1 -

Rev 5.0

12 3 4 5 6 7...21

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