是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最长访问时间: | 0.4 ns | 最大时钟频率 (fCLK): | 400 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 4,8 |
JESD-30 代码: | R-PBGA-B84 | JESD-609代码: | e1 |
内存密度: | 268435456 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 16 | 端子数量: | 84 |
字数: | 16777216 words | 字数代码: | 16000000 |
最高工作温度: | 85 °C | 最低工作温度: | |
组织: | 16MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA84,9X15,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.8 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
连续突发长度: | 4,8 | 最大待机电流: | 0.008 A |
子类别: | DRAMs | 最大压摆率: | 0.2 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | Tin/Silver/Copper (Sn97.0Ag2.5Cu0.5) | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4T56163QN-HCF8 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84 | |
K4T56163QN-HCF80 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | |
K4T56163QN-HCF8T | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84 | |
K4U52324QE-BC07 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX32, 0.16ns, CMOS, PBGA136 | |
K4U52324QE-BC07T | SAMSUNG |
获取价格 |
DDR DRAM, 16MX32, 0.16ns, CMOS, PBGA136 | |
K4U52324QE-BC08 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX32, 0.19ns, CMOS, PBGA136 | |
K4U52324QE-BC080 | SAMSUNG |
获取价格 |
Synchronous Graphics RAM, 16MX32, 0.19ns, CMOS, PBGA136, ROHS COMPLIANT, FBGA-136 | |
K4U52324QE-BC08T | SAMSUNG |
获取价格 |
DDR DRAM, 16MX32, 0.19ns, CMOS, PBGA136 | |
K4U52324QE-BC09 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX32, 0.2ns, CMOS, PBGA136 | |
K4U52324QE-BC090 | SAMSUNG |
获取价格 |
Synchronous Graphics RAM, 16MX32, 0.2ns, CMOS, PBGA136, ROHS COMPLIANT, FBGA-136 |