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K4U52324QE-BC08T PDF预览

K4U52324QE-BC08T

更新时间: 2024-11-03 10:03:19
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
70页 1719K
描述
DDR DRAM, 16MX32, 0.19ns, CMOS, PBGA136

K4U52324QE-BC08T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.75
最长访问时间:0.19 ns最大时钟频率 (fCLK):1200 MHz
I/O 类型:COMMON交错的突发长度:8
JESD-30 代码:R-PBGA-B136内存密度:536870912 bit
内存集成电路类型:DDR DRAM内存宽度:32
端子数量:136字数:16777216 words
字数代码:16000000最高工作温度:85 °C
最低工作温度:组织:16MX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA136,12X17,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
电源:1.8 V认证状态:Not Qualified
刷新周期:8192连续突发长度:8
最大待机电流:0.123 A子类别:DRAMs
最大压摆率:1.19 mA标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
Base Number Matches:1

K4U52324QE-BC08T 数据手册

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512M GDDR4 SGRAM  
K4U52324QE  
512Mbit GDDR4 SGRAM  
2M x 32Bit x 8 Banks  
Graphic Double Data Rate 4  
Synchronous DRAM  
with Uni-directional Data Strobe and DLL  
(136Ball FBGA)  
Revision 1.2  
May 2007  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.2 May 2007  
1 of 70  

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