是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
最长访问时间: | 0.19 ns | 最大时钟频率 (fCLK): | 1200 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 8 |
JESD-30 代码: | R-PBGA-B136 | 内存密度: | 536870912 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 32 |
端子数量: | 136 | 字数: | 16777216 words |
字数代码: | 16000000 | 最高工作温度: | 85 °C |
最低工作温度: | 组织: | 16MX32 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA136,12X17,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 1.8 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 8 |
最大待机电流: | 0.123 A | 子类别: | DRAMs |
最大压摆率: | 1.19 mA | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4U52324QE-BC09 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX32, 0.2ns, CMOS, PBGA136 | |
K4U52324QE-BC090 | SAMSUNG |
获取价格 |
Synchronous Graphics RAM, 16MX32, 0.2ns, CMOS, PBGA136, ROHS COMPLIANT, FBGA-136 | |
K4U52324QE-BC09T | SAMSUNG |
获取价格 |
DDR DRAM, 16MX32, 0.2ns, CMOS, PBGA136 | |
K4W1G1646D-EC15 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, CMOS, PBGA100, HALOGEN FREE AND ROHS COMPLIANT, FBGA-100 | |
K4W1G1646D-EJ11 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, CMOS, PBGA100, HALOGEN FREE AND ROHS COMPLIANT, FBGA-100 | |
K4W1G1646D-EJ12 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, CMOS, PBGA100, HALOGEN FREE AND ROHS COMPLIANT, FBGA-100 | |
K4W1G1646E | SAMSUNG |
获取价格 |
Graphic Memory | |
K4W1G1646E-HC110 | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 | |
K4W1G1646E-HC12T | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.225ns, CMOS, PBGA96 | |
K4W1G1646E-HC15T | SAMSUNG |
获取价格 |
DDR DRAM, 64MX16, 0.25ns, CMOS, PBGA96, |