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K4T1G164QQ-HIF70 PDF预览

K4T1G164QQ-HIF70

更新时间: 2024-11-21 08:08:23
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
42页 795K
描述
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84

K4T1G164QQ-HIF70 数据手册

 浏览型号K4T1G164QQ-HIF70的Datasheet PDF文件第2页浏览型号K4T1G164QQ-HIF70的Datasheet PDF文件第3页浏览型号K4T1G164QQ-HIF70的Datasheet PDF文件第4页浏览型号K4T1G164QQ-HIF70的Datasheet PDF文件第5页浏览型号K4T1G164QQ-HIF70的Datasheet PDF文件第6页浏览型号K4T1G164QQ-HIF70的Datasheet PDF文件第7页 
Industrial DDR2 SDRAM  
K4T1G164QQ  
1Gb Q-die DDR2 SDRAM Specification  
84FBGA with Lead-Free & Halogen-Free  
(RoHS compliant)  
Industrial temp. -40’c to 95’c  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
1 of 44  
Rev. 1.3 December 2008  

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