是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FBGA, BGA84,9X15,32 |
Reach Compliance Code: | unknown | 风险等级: | 5.71 |
最长访问时间: | 0.4 ns | 最大时钟频率 (fCLK): | 400 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 4,8 |
JESD-30 代码: | R-PBGA-B84 | JESD-609代码: | e3 |
内存密度: | 1073741824 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 16 | 湿度敏感等级: | 1 |
端子数量: | 84 | 字数: | 67108864 words |
字数代码: | 64000000 | 组织: | 64MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA84,9X15,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
峰值回流温度(摄氏度): | 225 | 电源: | 1.8 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
连续突发长度: | 4,8 | 最大待机电流: | 0.008 A |
子类别: | DRAMs | 最大压摆率: | 0.265 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 端子面层: | MATTE TIN |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4T1G313QI-MCE70 | SAMSUNG |
获取价格 |
DDR DRAM, 32MX32, 0.4ns, CMOS, PBGA128, HALOGEN FREE AND ROHS COMPLIANT, FBGA-128 | |
K4T1G313QI-MCF70 | SAMSUNG |
获取价格 |
DDR DRAM, 32MX32, 0.4ns, CMOS, PBGA128, HALOGEN FREE AND ROHS COMPLIANT, FBGA-128 | |
K4T28163QO | SAMSUNG |
获取价格 |
Consumer Memory | |
K4T28163QP-BCE6 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX16, 0.45ns, CMOS, PBGA84 | |
K4T28163QP-BCE60 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | |
K4T28163QP-BCE7 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX16, 0.4ns, CMOS, PBGA84 | |
K4T28163QP-BCE70 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | |
K4T28163QP-BCF70 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX16, 0.4ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | |
K4T28163QP-BCF80 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX16, 0.35ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84 | |
K4T2G044QA-HCE7 | SAMSUNG |
获取价格 |
暂无描述 |