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K4T2G084QA-HLE7 PDF预览

K4T2G084QA-HLE7

更新时间: 2024-11-08 07:02:51
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
43页 848K
描述
DDR DRAM, 256MX8, 0.4ns, CMOS, PBGA68,

K4T2G084QA-HLE7 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FBGA, BGA68,9X19,32Reach Compliance Code:compliant
风险等级:5.75最长访问时间:0.4 ns
最大时钟频率 (fCLK):400 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B68
内存密度:2147483648 bit内存集成电路类型:DDR DRAM
内存宽度:8端子数量:68
字数:268435456 words字数代码:256000000
最高工作温度:95 °C最低工作温度:
组织:256MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA68,9X19,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:1.8 V
认证状态:Not Qualified刷新周期:8192
连续突发长度:4,8最大待机电流:0.008 A
子类别:DRAMs最大压摆率:0.35 mA
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

K4T2G084QA-HLE7 数据手册

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K4T2G044QA  
K4T2G084QA  
2Gb DDR2 SDRAM  
2Gb A-die DDR2 SDRAM Specification  
68FBGA with Lead-Free and Halogen-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.0 December 2007  
1 of 43  

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