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K4T51043QC-ZCD5TM0 PDF预览

K4T51043QC-ZCD5TM0

更新时间: 2024-11-20 15:42:23
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
28页 652K
描述
DDR DRAM, 128MX4, 0.5ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60

K4T51043QC-ZCD5TM0 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:60
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.28风险等级:5.31
访问模式:FOUR BANK PAGE BURST最长访问时间:0.5 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PBGA-B60
长度:11 mm内存密度:536870912 bit
内存集成电路类型:DDR DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:60字数:134217728 words
字数代码:128000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:128MX4封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL EXTENDED
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:10 mm
Base Number Matches:1

K4T51043QC-ZCD5TM0 数据手册

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K4T51043QC  
K4T51083QC  
K4T51163QC  
512Mb DDR2 SDRAM  
512Mb C-die DDR2 SDRAM Specification  
60FBGA & 84FBGA with Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
1 of 29  
Rev. 1.9 March 2007  

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