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K4T1G164QQ-HLF7T PDF预览

K4T1G164QQ-HLF7T

更新时间: 2024-02-18 21:02:06
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器双倍数据速率
页数 文件大小 规格书
45页 977K
描述
DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84

K4T1G164QQ-HLF7T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA60,9X11,32Reach Compliance Code:unknown
风险等级:5.84最长访问时间:0.4 ns
最大时钟频率 (fCLK):400 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B60
内存密度:1073741824 bit内存集成电路类型:DDR DRAM
内存宽度:4端子数量:60
字数:268435456 words字数代码:256000000
组织:256MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA60,9X11,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:1.8 V
认证状态:Not Qualified刷新周期:8192
连续突发长度:4,8子类别:DRAMs
最大压摆率:0.245 mA标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOMBase Number Matches:1

K4T1G164QQ-HLF7T 数据手册

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K4T1G044QQ  
K4T1G084QQ  
K4T1G164QQ  
DDR2 SDRAM  
1Gb Q-die DDR2 SDRAM Specification  
60FBGA & 84FBGA with Lead-Free & Halogen-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE  
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-  
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-  
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT  
GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
1 of 45  
Rev. 1.2 December 2008  

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