Datasheet > K4T1G164QQ-HC(L)E6

K4T1G164QQ-HC(L)E6

更新时间： 2024-11-20 03:02:11

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率
页数	文件大小	规格书
44页	886K
描述
1Gb Q-die DDR2 SDRAM Specification

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K4T1G164QQ-HC(L)E6 数据手册

K4T1G044QQ

K4T1G084QQ

K4T1G164QQ

DDR2 SDRAM

1Gb Q-die DDR2 SDRAM Specification

60FBGA & 84FBGA with Pb-Free & Halogen-Free

(RoHS compliant)

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure couldresult in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

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Rev. 1.01 November 2007

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型号	品牌	获取价格	描述	数据表
K4T1G164QQ-HC(L)E7	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HC(L)F7	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HCE6	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HCE7	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HCE70	SAMSUNG	获取价格	DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4T1G164QQ-HCE7T	SAMSUNG	获取价格	DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84
K4T1G164QQ-HCF7	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HCF7T	SAMSUNG	获取价格	DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84
K4T1G164QQ-HCLE6	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HCLE7	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification