Datasheet > K4T1G164QG-BPE60

K4T1G164QG-BPE60

更新时间： 2024-11-08 06:29:27

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器双倍数据速率
页数	文件大小	规格书
44页	484K
描述
DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, HALOGEN FREE AND ROHS COMPLIANT, FBGA-84

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K4T1G164QG-BPE60 数据手册

Rev. 1.0, Feb. 2014

K4T1G084QG

K4T1G164QG

1Gb G-die DDR2 SDRAM Industrial

60FBGA/84FBGA with Lead-Free & Halogen-Free

(RoHS compliant)

datasheet

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SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are for reference purposes only. All information discussed

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型号	品牌	获取价格	描述	数据表
K4T1G164QG-BPE6T	SAMSUNG	获取价格	DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84
K4T1G164QM-ZCCC	SAMSUNG	获取价格	1Gb M-die DDR2 SDRAM Specification
K4T1G164QM-ZCD5	SAMSUNG	获取价格	1Gb M-die DDR2 SDRAM Specification
K4T1G164QQ	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HC(L)E6	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HC(L)E7	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HC(L)F7	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HCE6	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HCE7	SAMSUNG	获取价格	1Gb Q-die DDR2 SDRAM Specification
K4T1G164QQ-HCE70	SAMSUNG	获取价格	DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84