Datasheet > JS28F512M29EWLA

JS28F512M29EWLA

更新时间： 2024-01-07 16:58:37

品牌	Logo	应用领域
镁光 - MICRON		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
75页	855K
描述
Parallel NOR Flash Embedded Memory

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技术参数
数据手册
替代型号

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JS28F512M29EWLA 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TSOP	包装说明：	14 X 20 MM, GREEN, TSOP-56
针数：	56	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.45	Is Samacsys：	N
最长访问时间：	110 ns	备用内存宽度：	8
启动块：	BOTTOM/TOP	JESD-30 代码：	R-PDSO-G56
长度：	18.4 mm	内存密度：	536870912 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	端子数量：	56
字数：	33554432 words	字数代码：	32000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	32MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
编程电压：	3 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	类型：	NOR TYPE
宽度：	14 mm	Base Number Matches：	1

JS28F512M29EWLA 数据手册

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash

Features

List of Tables

Table 1: Part Number Information ................................................................................................................... 2

Table 2: Standard Part Numbers by Density, Medium, and Package ................................................................... 2

Table 3: Part Numbers with Security Features by Density, Medium, and Package ................................................ 3

Table 4: Signal Descriptions ........................................................................................................................... 12

Table 5: Blocks[2047:0] .................................................................................................................................. 13

Table 6: Bus Operations ................................................................................................................................. 14

Table 7: Status Register Bit Definitions ........................................................................................................... 16

Table 8: Operations and Corresponding Bit Settings ........................................................................................ 17

Table 9: Lock Register Bit Definitions ............................................................................................................. 21

Table 10: Block Protection Status ................................................................................................................... 21

Table 11: Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit ........................................... 24

Table 12: Read Electronic Signature ............................................................................................................... 27

Table 13: Block Protection ............................................................................................................................. 27

Table 14: Block Protection Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit ................................ 37

Table 15: Extended Memory Block Address and Data ...................................................................................... 43

Table 16: V_PP/WP# Functions ......................................................................................................................... 45

Table 17: Query Structure Overview ............................................................................................................... 49

Table 18: CFI Query Identification String ........................................................................................................ 49

Table 19: CFI Query System Interface Information .......................................................................................... 50

Table 20: Device Geometry Definition ............................................................................................................ 50

Table 21: Primary Algorithm-Specific Extended Query Table ........................................................................... 51

Table 22: Power-Up Specifications ................................................................................................................. 53

Table 23: Reset AC Specifications ................................................................................................................... 54

Table 24: Absolute Maximum/Minimum Ratings ............................................................................................ 55

Table 25: Operating Conditions ...................................................................................................................... 55

Table 26: Input/Output Capacitance .............................................................................................................. 56

Table 27: DC Current Characteristics .............................................................................................................. 57

Table 28: DC Voltage Characteristics .............................................................................................................. 58

Table 29: Read AC Characteristics .................................................................................................................. 59

Table 30: WE#-Controlled Write AC Characteristics ......................................................................................... 62

Table 31: CE#-Controlled Write AC Characteristics ......................................................................................... 65

Table 32: Accelerated Program and Data Polling/Data Toggle AC Characteristics .............................................. 69

Table 33: Program/Erase Characteristics ........................................................................................................ 71

Table 34: Technical Notes .............................................................................................................................. 74

PDF: 09005aef849b4b09

m29ew_256mb_2gb.pdf - Rev. B 8/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

1...4 5 678 9 10...75

中文翻译

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JS28F512M29EWLA 替代型号

型号	品牌	替代类型	描述	数据表
JS28F512M29EWHB	MICRON	完全替代	Parallel NOR Flash Embedded Memory
JS28F512M29EWHA	MICRON	完全替代	Parallel NOR Flash Embedded Memory
JS28F512P30BFA	MICRON	类似代替	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard

与JS28F512M29EWLA相关器件

型号	品牌	获取价格	描述	数据表
JS28F512M29EWLB	MICRON	获取价格	Parallel NOR Flash Embedded Memory
JS28F512P30BF	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30BF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
JS28F512P30BFA	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30BFA	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F512P30EF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
JS28F512P30EF	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56
JS28F512P30EFA	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F512P30TF	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
JS28F512P30TF	NUMONYX	获取价格	Flash, 32MX16, 110ns, PDSO56, LEAD FREE, TSOP-56

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