生命周期: | Obsolete | 零件包装代码: | TSOP |
包装说明: | 14 X 20 MM, LEAD FREE, TSOP-56 | 针数: | 56 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.63 |
最长访问时间: | 75 ns | 备用内存宽度: | 8 |
JESD-30 代码: | R-PDSO-G56 | 长度: | 18.4 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 56 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
类型: | NOR TYPE | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JS28F640J3F-75 | NUMONYX |
获取价格 |
Flash, 4MX16, 75ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56 | |
JS28F640J3F75A | MICRON |
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Numonyx® Embedded Flash Memory (J3 65 nm) Si | |
JS28F640J3F75B | MICRON |
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Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard | |
JS28F640J3F75D | MICRON |
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32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC) | |
JS28F640J3F75E | MICRON |
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Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard | |
JS28F640P30B85 | NUMONYX |
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Numonyx StrataFlash Embedded Memory | |
JS28F640P30B85 | INTEL |
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Intel StrataFlash Embedded Memory | |
JS28F640P30B85A | NUMONYX |
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暂无描述 | |
JS28F640P30B85B | NUMONYX |
获取价格 |
Flash, 4MX16, 88ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56 | |
JS28F640P30BF75A | MICRON |
获取价格 |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard |