Datasheet > JMTM300N03D

JMTM300N03D

更新时间： 2023-12-06 20:07:53

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	715K
描述
低压 N-ch (≤ 30V )

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JMTM300N03D 数据手册

JMTM300N03D

Description

JMT Dual N-channel Enhancement Mode Power MosFET

Features

Applications

 Load Switch

 30V, 4.8A

 PWM Application

 Power Management

R_DS(ON)< 33mΩ @ V_GS= 10V

R_DS(ON)< 35mΩ @ V_GS= 4.5V

R_DS(ON)< 42mΩ @ V_GS= 2.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead Free

Schematic Diagram

Marking and Pin Assignment

SOT-23-6L(Dual) Top View

Package Marking and Ordering Information

Per Carton

(pcs)

Device Marking

Device

Package

Outline

Reel Size Reel(pcs)

7" 3000

300N03D

JMTM300N03D

SOT-23-6L

TAPING

120000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

±12

4.8

T_A= 25°C

I_D

Continuous Drain Current

T_A= 100°C

Pulsed Drain Current ⁽¹⁾

I_DM

P_D

Power Dissipation

T_A= 25°C

1.2

103

Thermal Resistance, Junction to Ambient⁽²⁾

Junction & Storage Temperature Range

R_θJA

°C/W

°C

T_J, T_STG

-55 to 150

JieJie Microelectronics Co., Ltd

Version:1.1

12 3 4 5 6

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