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JMTM300N03D PDF预览

JMTM300N03D

更新时间: 2024-11-19 14:54:19
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 715K
描述
低压 N-ch (≤ 30V )

JMTM300N03D 数据手册

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JMTM300N03D  
Description  
JMT Dual N-channel Enhancement Mode Power MosFET  
Features  
Applications  
Load Switch  
30V, 4.8A  
PWM Application  
Power Management  
RDS(ON) < 33mΩ @ VGS = 10V  
RDS(ON) < 35mΩ @ VGS = 4.5V  
RDS(ON) < 42mΩ @ VGS = 2.5V  
Advanced Trench Technology  
Excellent RDS(ON) and Low Gate Charge  
Lead Free  
D1  
S1  
D2  
S2  
G1  
G2  
Schematic Diagram  
Marking and Pin Assignment  
SOT-23-6L(Dual) Top View  
Package Marking and Ordering Information  
Per Carton  
(pcs)  
Device Marking  
Device  
Package  
Outline  
Reel Size Reel(pcs)  
7" 3000  
300N03D  
JMTM300N03D  
SOT-23-6L  
TAPING  
120000  
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Value  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
30  
±12  
4.8  
3
V
V
TA = 25°C  
ID  
Continuous Drain Current  
A
TA = 100°C  
Pulsed Drain Current (1)  
IDM  
PD  
19  
A
W
Power Dissipation  
TA = 25°C  
1.2  
103  
Thermal Resistance, Junction to Ambient(2)  
Junction & Storage Temperature Range  
RθJA  
°C/W  
°C  
TJ, TSTG  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version:1.1  

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